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| AO6810 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO6810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6810 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 3.1 A (VGS = 10V) RDS(ON) < 77m (VGS = 10V) RDS(ON) < 120m (VGS = 4.5V) TSOP6 Top View G1 S2 G2 D1 S1 D2 D1 D2 16 25 34 G1 S1 G2 S2 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 20 3.1 2.4 12 1.15 0.73 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics each FET Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 78 106 64 Max 110 150 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6810 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=3.1A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=3.1A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current TJ=125C 1 12 54 78 88 4.5 0.79 1 2.5 200 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 42 20 2.5 6.6 VGS=10V, VDS=15V, ID=3.1A 3.2 1.3 1.6 3.4 VGS=10V, VDS=15V, RL=4.7, RGEN=3 IF=3.1A, dI/dt=100A/s 2.5 13.2 1.8 9.5 3.6 13 3.2 8.7 4 240 120 77 1.9 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0: Sept 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha and Omega Semiconductor, Ltd. www.aosmd.com AO6810 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J 15 12 9 ID (A) 6 3 VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 120 Normalized On-Resistance 110 100 RDS(ON) (m) 90 80 70 60 50 40 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 250 200 RDS(ON) (m) 150 125C 100 50 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=3.1A 1.0E+01 1.0E+00 1.0E-01 IS (A) 1.0E-02 25C 1.0E-03 25C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics VGS=10V VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=2A VGS=10V ID=3.1A 0 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS(Volts) Figure 2: Transfer Characteristics 10 10V 8V 6V 4.5V 6 ID(A) 4V 3.5V 4 2 125C 25C 5V 8 VDS=5V 125C Alpha and Omega Semiconductor, Ltd. www.aosmd.com AO6810 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J 10 8 VGS (Volts) 6 4 2 0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics 400 VDS=15V ID=3.1A Capacitance (pF) 300 Ciss 200 Coss 100 Crss 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150C TA=25C 10.0 RDS(ON) limited 100s 10s Power (W) 20 TJ(Max)=150C TA=25C 15 ID (Amps) 1ms 0.1s 10ms 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha and Omega Semiconductor, Ltd. www.aosmd.com |
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